| Autor: |
Yoshikazu Kato, Jun ich Nishzawa, Arata Yasuda, Yutaka Oyama, Ken Suto, Yatsuhiro Takahashi |
| Rok vydání: |
2008 |
| Předmět: |
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| Zdroj: |
Journal of Physics and Chemistry of Solids. 69:727-729 |
| ISSN: |
0022-3697 |
| DOI: |
10.1016/j.jpcs.2007.07.066 |
| Popis: |
Indium-doped PbTe epitaxial layers and pn homojunction diodes were grown on PbTe substrate using the temperature-difference method under controlled vapor pressure (TDM-CVP) liquid-phase epitaxy (LPE). The activation ratio of indium donor in the PbTe epitaxial layer was as high as 80%, and we achieved high electron concentrations up to n D =5×10 19 cm −3 . In view of the enhanced electron mobility, it is shown that the optimum Te vapor pressure for an In-doped PbTe epitaxial layer is about 2×10 −5 Torr at 470 °C, which agrees well with the results for undoped and heavily Bi-doped PbTe epitaxial layers. In-doped n + -PbTe layer was successfully applied for the fabrication of broad contact pn junction lasers and excellent lasing emissions were achieved, characteristics as compared to Bi-doped and -undoped cladding layers. The threshold current for a broad area diode is 200 A/cm 2 at 15 K and 2.7 kA/cm 2 at 77 K. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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