Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization

Autor:	Masanobu Miyao, Hongmiao Gao, Masaya Sasaki, Rikuta Aoki, Taizoh Sadoh
Rok vydání:	2017
Předmět:	education.field_of_study Materials science Annealing (metallurgy) Population Analytical chemistry Insulator (electricity) Integrated circuit law.invention Crystallography law Electron optics Crystallization education High electron
Zdroj:	2017 17th International Workshop on Junction Technology (IWJT).
DOI:	10.23919/iwjt.2017.7966503
Popis:	Low temperature (≤500°C) formation of n-type crystalline Ge films on insulator is required to achieve the next-generation large-scale integrated circuits (LSI), where optical functions are merged. This is because n-type Ge shows high-efficiency optical functions owing to high electron population in the Γ band.
Databáze:	OpenAIRE
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