A non-volatile MOSFET memory device based on mobile protons in SiO2 thin films
| Autor: | Daniel M. Fleetwood, Bruce L. Draper, R. A. B. Devine, Karel Vanheusden, J.R. Schwank, William L. Warren |
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| Rok vydání: | 1999 |
| Předmět: |
Materials science
Silicon business.industry Transistor Oxide chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY Condensed Matter Physics Flash memory Electronic Optical and Magnetic Materials law.invention Non-volatile memory chemistry.chemical_compound chemistry law Gate oxide MOSFET Hardware_INTEGRATEDCIRCUITS Materials Chemistry Ceramics and Composites Optoelectronics Field-effect transistor business |
| Zdroj: | Journal of Non-Crystalline Solids. 254:1-10 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/s0022-3093(99)00366-x |
| Popis: | It is shown how mobile H{sup +} ions can be generated thermally inside the oxide layer of Si/SiO{sub 2}/Si structures. The technique involves only standard silicon processing steps: the nonvolatile field effect transistor (NVFET) is based on a standard MOSFET with thermally grown SiO{sub 2} capped with a poly-silicon layer. The capped thermal oxide receives an anneal at {approximately}1100 C that enables the incorporation of the mobile protons into the gate oxide. The introduction of the protons is achieved by a subsequent 500-800 C anneal in a hydrogen-containing ambient, such as forming gas (N{sub 2}:H{sub 2} 95:5). The mobile protons are stable and entrapped inside the oxide layer, and unlike alkali ions, their space-charge distribution can be controlled and rapidly rearranged at room temperature by an applied electric field. Using this principle, a standard MOS transistor can be converted into a nonvolatile memory transistor that can be switched between normally on and normally off. Switching speed, retention, endurance, and radiation tolerance data are presented showing that this non-volatile memory technology can be competitive with existing Si-based non-volatile memory technologies such as the floating gate technologies (e.g. Flash memory). |
| Databáze: | OpenAIRE |
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