Facility for rapid preparation of silicon and silicide TEM specimens
Autor: | S. Kritzinger, C. L. Churms |
---|---|
Rok vydání: | 1984 |
Předmět: |
Reproducibility
Nitrous acid Histology Materials science Silicon business.industry Mineralogy chemistry.chemical_element Polishing equipment and supplies humanities eye diseases Pathology and Forensic Medicine Reaction rate chemistry.chemical_compound Semiconductor chemistry Transmission electron microscopy Silicide Composite material business |
Zdroj: | Journal of Microscopy. 135:287-294 |
ISSN: | 0022-2720 |
DOI: | 10.1111/j.1365-2818.1984.tb02534.x |
Popis: | SUMMARY A simple chemical jet polishing arrangement, for the thinning of semiconductors or metals for transmission electron microscopy (TEM), is described for the specific case of silicon and silicides. The effect of variation in three mechanical parameters on the profile and quality of the specimen is described, and the optimum conditions are determined. A proposed polishing solution is one part 48% HF mixed with one part fuming HNO3. Reproducibility is only achieved in the presence of a relatively large concentration of nitrous acid in the polishing solution. The solution must also be relatively concentrated, as the reaction rate falls off rapidly with decreasing concentration. |
Databáze: | OpenAIRE |
Externí odkaz: |