Facility for rapid preparation of silicon and silicide TEM specimens

Autor: S. Kritzinger, C. L. Churms
Rok vydání: 1984
Předmět:
Zdroj: Journal of Microscopy. 135:287-294
ISSN: 0022-2720
DOI: 10.1111/j.1365-2818.1984.tb02534.x
Popis: SUMMARY A simple chemical jet polishing arrangement, for the thinning of semiconductors or metals for transmission electron microscopy (TEM), is described for the specific case of silicon and silicides. The effect of variation in three mechanical parameters on the profile and quality of the specimen is described, and the optimum conditions are determined. A proposed polishing solution is one part 48% HF mixed with one part fuming HNO3. Reproducibility is only achieved in the presence of a relatively large concentration of nitrous acid in the polishing solution. The solution must also be relatively concentrated, as the reaction rate falls off rapidly with decreasing concentration.
Databáze: OpenAIRE