Optical Properties of InGaN/GaN Multiple Quantum Well Structures Grown on GaN and Sapphire Substrates
| Autor: | Alice Hospodková, Vitezslav Jary, M. Nikl, František Hájek, Karel Blazek, Tomáš Hubáček |
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| Rok vydání: | 2020 |
| Předmět: |
Nuclear and High Energy Physics
Photoluminescence Materials science 010308 nuclear & particles physics business.industry Gallium nitride Epitaxy 01 natural sciences chemistry.chemical_compound Nuclear Energy and Engineering chemistry 0103 physical sciences Sapphire Optoelectronics Emission spectrum Electrical and Electronic Engineering Luminescence Spectroscopy business Photonic crystal |
| Zdroj: | IEEE Transactions on Nuclear Science. 67:974-977 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2020.2985666 |
| Popis: | A set of samples based on InGaN/GaN multiple quantum well (QW) structures with an extremely thick active region and high QW numbers was prepared on different substrates by metal organic vapor phase epitaxy. Their morphology was studied by SEM images, and their optical properties, including photoluminescence (PL) excitation, PL emission spectra, and PL decay curves, were measured by means of time-resolved luminescence spectroscopy. The obtained spectral features were tentatively explained by using the band scheme, which is commonly used for the description of InGaN/GaN multiple QW (MQW) structures. The application potential in the field of nanoscintillators used for fast timing of studied structures is discussed as well. |
| Databáze: | OpenAIRE |
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