A plastic package GaAs MESFET 5.8-GHz receiver front-end with on-chip matching for ETC system

Autor:	Hiroshi Nakamura, Eng Chuan Low, K. Yan, H.I. Fujishiro
Rok vydání:	2000
Předmět:	Radiation Materials science business.industry Amplifier Impedance matching Integrated circuit design Condensed Matter Physics Noise figure Bandwidth (computing) Optoelectronics MESFET Integrated circuit packaging Electrical and Electronic Engineering business Monolithic microwave integrated circuit
Zdroj:	IEEE Transactions on Microwave Theory and Techniques. 48:209-213
ISSN:	0018-9480
DOI:	10.1109/22.821763
Popis:	A plastic package GaAs MESFET receiver front-end monolithic microwave integrated circuit operating at 5.8 GHz is presented in this paper. It has a two-stage low-noise amplifier followed by a dual-gate mixer. Operating at 3 V and 8.3 mA, a conversion gain of 20.4 dB, noise figure of 4.1 dB, and high port-to-port isolations have been achieved. Total chip size of 1.0/spl times/0.9 mm/sup 2/ has been achieved through on-chip matching for both RF and local-oscillator ports and the use of simple two-element matching networks for all interstage matching. The 3-dB bandwidth of conversion gain is 1 GHz.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::234d617bcf34f4bf2dacab6f317c58e1 https://doi.org/10.1109/22.821763 Zobrazit plný text záznamu