Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide at seven common laser pumping wavelengths
| Autor: | T.J Eperjesi, Wolfgang J. Choyke, S. G. Sridhara, Robert P. Devaty |
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| Rok vydání: | 1999 |
| Předmět: |
Materials science
Absorption spectroscopy business.industry Mechanical Engineering Laser pumping Condensed Matter Physics medicine.disease_cause Laser law.invention chemistry.chemical_compound Wavelength Optics chemistry Mechanics of Materials law Attenuation coefficient Silicon carbide medicine General Materials Science business Penetration depth Ultraviolet |
| Zdroj: | Materials Science and Engineering: B. :229-233 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/s0921-5107(98)00508-x |
| Popis: | We report the values of the absorption coefficient of 4H, 6H and 3C SiC at room temperature, in the range 3900–2968 A. By using the known shift in the bandgap with temperature, we also present estimates of the absorption coefficient of 4H, 6H and 3C SiC at 2 K. A table is given for penetration depths at 300 and 2 K for seven common lasers used to pump SiC in this region. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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