Native‐oxide defined In0.5(AlxGa1−x)0.5P quantum well heterostructure window lasers (660 nm)

Autor:	David W. Treat, John Dallesasse, F. A. Kish, David P. Bour, S. J. Caracci, Nick Holonyak, Steven A Maranowski
Rok vydání:	1992
Předmět:	Fabrication Materials science Physics and Astronomy (miscellaneous) Aperture business.industry Oxide Mineralogy Heterojunction Laser Semiconductor laser theory law.invention chemistry.chemical_compound chemistry law Optoelectronics Joule heating business Quantum well
Zdroj:	Applied Physics Letters. 61:1688-1690
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.108452
Popis:	Data are presented demonstrating In0.5(AlxGa1−x)0.5P quantum well heterostructure lasers with extended current‐blocking windows (∼75 μm/window) that exhibit significant improvements in output power (∼2×) compared to lasers with no windows. The windows and active stripes are defined by the formation of a thin (∼1000 A, patterned) native oxide via H2O vapor oxidation (550 °C) of the high‐gap In0.5(AlxGa1−x)0.5P upper confining layer. Devices operating at ∼660 nm with a 40 μm wide emitting aperture (∼500 μm cavity) and ∼75 μm windows (total window length ∼150 μm) exhibit 300 K continuous output powers ≳130 mW/facet (uncoated) and pulsed output powers ≳575 mW/facet (uncoated). Improvements in output power result from decreased heating at the facets and defocusing of the optical wave in the unpumped window regions.
Databáze:	OpenAIRE
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