AlGaN/GaN Schottky barrier diodes on silicon substrates with various Fe doping concentrations in the buffer layers
| Autor: | Bo-Hong Li, Hou-Yu Wang, Kuang-Po Hsueh, Li-Yi Peng, Hsiang-Chun Wang, Jiun-Wei Chiu, Hsien-Chin Chiu, Shang-Cyun Chen |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Silicon Schottky barrier Doping Analytical chemistry chemistry.chemical_element Schottky diode 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Buffer (optical fiber) Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry 0103 physical sciences Breakdown voltage Electrical and Electronic Engineering 0210 nano-technology Safety Risk Reliability and Quality Layer (electronics) Diode |
| Zdroj: | Microelectronics Reliability. 83:238-241 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2017.05.034 |
| Popis: | This study demonstrated AlGaN/GaN Schottky barrier diodes (SBDs) for use in high-frequency, high-power, and high-temperature electronics applications. Four structures with various Fe doping concentrations in the buffer layers were investigated to suppress the leakage current and improve the breakdown voltage. The fabricated SBD with an Fe-doped AlGaN buffer layer of 8 × 10 17 cm − 3 realized the highest on-resistance (R ON ) and turn-on voltage (V ON ) because of the memory effect of Fe diffusion. The optimal device was the SBD with an Fe-doped buffer layer of 7 × 10 17 cm − 3 , which exhibited a R ON of 31.6 mΩ-cm 2 , a V ON of 1.2 V, a breakdown voltage of 803 V, and a buffer breakdown voltage of 758 V. Additionally, the low-frequency noise decreased when the Fe doping concentration in the buffer layer was increased. This was because the electron density in the channel exhibited the same trend as that of the Fe doping concentration in the buffer layer. |
| Databáze: | OpenAIRE |
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