The role of the substrate surface area/reactor volume ratio in chemistry and kinetics of chemical vapor deposition

Autor: K. J. Hüttinger, Z.J. Hu, W.G. Zhang, J. Antes, M. Teubner
Rok vydání: 1999
Předmět:
Zdroj: Le Journal de Physique IV. :Pr8-79
ISSN: 1155-4339
DOI: 10.1051/jp4:1999810
Popis: Chemical vapor deposition of carbon from methane was used as a test reaction to investigate the influence of the substrate surface area/reactor volume ratio, [A S /V R ], on the deposition kinetics. Experiments were performed at an ambient pressure of about 100 kPa and a temperature of 1100 °C using methane at a partial pressure of 10 kPa and a methane/hydrogen mixture (P CH4 =17.5kPa, P H2 =2.5kPa). The [A S /V R ]-ratio was varied from 1.8 to 10, 20, 40 and 80 cm -1 . It is shown that surface related deposition rates are not constant, but decrease with increasing [A S /V R ]-ratio. This result indicates that any kinetics can be determined by changing this ratio, which is called the third parameter of CVD. Consequences are discussed.
Databáze: OpenAIRE