Growth Kinetics of Silicon Thermal Nitridation
| Autor: | Ming‐Kwang Lee, Chwan‐Wen King, Ching‐Yuan Wu, Chin‐Tang Chen |
|---|---|
| Rok vydání: | 1982 |
| Předmět: |
Thermal oxidation
Materials science Silicon Renewable Energy Sustainability and the Environment chemistry.chemical_element Activation energy Chemical vapor deposition Nitride Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Chemical engineering Silicon nitride chemistry Materials Chemistry Electrochemistry Diffusion (business) High-κ dielectric |
| Zdroj: | Journal of The Electrochemical Society. 129:1559-1563 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2124207 |
| Popis: | An analytic model for the growth kinetics of silicon thermal nitridation has been developed, in which the nitrogen radicals diffused across the as-grown thermal silicon nitride layer have been characterized by a characteristic diffusion length. It has been shown that the direct thermal nitridation of silicon in ammonia gas or nitrogen gas is similar to the silicon oxidation in oxygen or steam when the characteristic diffusion length of the nitrogen radicals is much larger than the as-grown silicon nitride layer. However, when the thickness of the as-grown silicon nitride film is larger than the characteristic diffusion length of the nitrogen radicals, the thickness of the as-grown silicon nitride film tends to saturate. The self-limiting growth has been verified to be the "logarithmic" relation of the developed model, and the activation energy of the quasi-saturation thickness has been shown to be the activation energy of the characteristic diffusion length. Based on comparisons between the experimental data and the developed model the characteristic diffusion length has been shown to be very short and has been estimated to be smaller than I0~ for nitridation temperature below 1200~ and its activation energy has been estimated to be of 0.181 eV. Moreover, the linear growth rate constant and the parabolic growth rate constant of the as-grown thermal nitride films have been estimated to be of 1.286 and 1.546 eV, respectively, which are smaller than those of the silicon oxidation in dry oxygen or steam ambient. In addition, it has been shown that the linear growth rate constant of the thermal nitridation using ammonia gas is larger than that of the thermal oxidation using dry oxygen or steam ambient, which predicts that the surface-limited reaction of the silicon surface in ammonia gas is faster than that in dry oxygen or steam ambient. Silicon nitride films, which exhibit high structure density, high dielectric constant, good electrical properties, and strong inertness toward chemicals, have been widely used in semiconductor devices and integrated circuit fabrications. However, high quality silicon nitride films have been prepared by expensive methods such as chemical vapor deposition (CVD) or plasma deposition. In modern silicon technologies, * Electrochemical Society Active Member. |
| Databáze: | OpenAIRE |
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