Surface modification and cleaning enhancement of TaSi(N) films with dilute hydrofluoric acid
| Autor: | R. Whig, W. J. Dauksher, W. L. O’Brien, P. J. S. Mangat |
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| Rok vydání: | 2000 |
| Předmět: |
Materials science
Photoemission spectroscopy business.industry Extreme ultraviolet lithography Analytical chemistry Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films Amorphous solid chemistry.chemical_compound Hydrofluoric acid chemistry Optoelectronics Thin film business Lithography Buffered oxide etch Next-generation lithography |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:1211-1215 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.582327 |
| Popis: | Amorphous TaSi(N) alloy films are of great interest for application in the fabrication of reticles for next generation lithography and for incorporation into semiconductor devices as barrier layers for Cu processing. The stress characteristics of TaSi(N) films are critical when used as an absorber on x-ray and extreme ultraviolet lithography masks, or as a scatterer for electron projection lithography masks. One little understood, but critical characteristic of these films, is that they undergo a stress change towards a less tensile or more compressive state upon interaction with a buffered oxide etch (BOE). We have investigated the cause of this behavior using synchrotron radiation based high-resolution core level (Ta 4f and Si 2p) photoemission spectroscopy. Our results indicate that, upon interaction with a BOE, the surface oxide undergoes a major reorganization and the Ta gets heavily oxidized, resulting in the formation of Ta2O5. Such a reaction would lead to a buildup of strain in the oxidized regio... |
| Databáze: | OpenAIRE |
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