| Autor: | Z. M. Ding, Z. B. Zhou, W. Y. Li, R. Q. Cui, G. M. Hadi |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
Silicon Analytical chemistry chemistry.chemical_element Substrate (electronics) Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Amorphous solid Crystal Crystallography chemistry Grain boundary Crystallite Electrical and Electronic Engineering Thin film Tin |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 12:417-421 |
| ISSN: | 0957-4522 |
| DOI: | 10.1023/a:1011247017682 |
| Popis: | Fluorine-doped tin oxide thin films with amorphous/crystal mixed phases were deposited on silicon and quartz sheets by an ultrasonic spraying method and investigated with XPS, XRD, AFM and TEM techniques. The XRD spectra and the results of TEM analysis show that nanoscale amorphous clusters were formed within the grain boundary region. At room temperature, electron transportation is predominantly limited by amorphous defect scattering of the crystal grain boundary region. The minimum electrical resistivity 4.0×104Ωcm was obtained through decreasing the amorphous phase fraction and the preferred orientation arrangement of the crystal grains. A 0.8-eV shift exists between the tin 3d binding energy in thin films having the preferred crystallite orientation with (1 1 0) plane parallel to the substrate and that with the (2 0 0) plane parallel to the substrate. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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