60-GHz SiGe BiCMOS dual-conversion down-converter: Schottky diode RF mixer and analog Gilbert IF mixer with microwave quadrature generator
| Autor: | Jen-Chieh Kao, Hung-Ju Wei, Chinchun Meng, Guo-Wei Huang |
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| Rok vydání: | 2016 |
| Předmět: |
Engineering
Digital down converter business.industry 020208 electrical & electronic engineering Electrical engineering Schottky diode 020206 networking & telecommunications 02 engineering and technology BiCMOS Silicon-germanium chemistry.chemical_compound chemistry Balun 0202 electrical engineering electronic engineering information engineering Radio frequency Wideband business Frequency mixer |
| Zdroj: | 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF). |
| DOI: | 10.1109/sirf.2016.7445466 |
| Popis: | A 60 GHz dual-conversion down-converter using 0.35 μm SiGe BiCMOS process is demonstrated in this paper. A Schottky diode ring mixer with wideband Marchand balun works as the 60-GHz RF mixer while two analog Gilbert micromixers with LO port pumped by two quadrature couplers work as IF mixers. The cut-off frequency of a Schottky diode makes a fundamental RF ring mixer possible because the series resistance of a Schottky diode is effectively reduced by the n+ buried layer in SiGe BiCMOS process. A Gilbert micromixer with an IF buffer is used to accommodate the single-ended output of the RF ring mixer. By combining these advantages, a dual-conversion down-converter is achieved. The converter has about 8 dB conversion gain, 10 GHz RF bandwidth of 50–60 GHz, 100 MHz IF bandwidth when LO1 power is 8 dBm and LO2 power is 2 dBm. |
| Databáze: | OpenAIRE |
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