| Autor: |
L M Dolginov, L V Druzhinina, I Ismailov, R Altynbaev, N Shokhudzhaev, P G Eliseev |
| Rok vydání: |
1976 |
| Předmět: |
|
| Zdroj: |
Soviet Journal of Quantum Electronics. 6:577-579 |
| ISSN: |
0049-1748 |
| DOI: |
10.1070/qe1976v006n05abeh011355 |
| Popis: |
An investigation was made of the spectral, threshold, power, and time characteristics of laser diodes of planar and stripe geometry with AlxGa1–xAs double heterostructures. The threshold current densities in the Al02Gao8As lasers were 0.9 kA/cm2 at 77°K and 6 kA/cm2 at 300°K; these densities depended on the solid-solution composition in the active region. The output power of the planar diodes reached 8.2 W at 77°K and 3.6 W at 300°K; their differential efficiency was 0.5 and 0.22 at 77 and 300°K, respectively. The output power of the stripe lasers was 0.75 W per pulse and the differential efficiency was 0.26 at 77°K. The lifetime of electron-hole pairs was estimated under spontaneous and coherent emission conditions at 77 and 300°K. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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