High‐reflectivity visible‐wavelength semiconductor native oxide Bragg reflectors grown by metalorganic chemical vapor deposition

Autor:	R. V. Chelakara, F. J. Ciuba, M.R. Islam, Nick Holonyak, Russell D. Dupuis, E. I. Chen, Steven A Maranowski, M. J. Ries, Archie L. Holmes
Rok vydání:	1995
Předmět:	Materials science Fabrication Physics and Astronomy (miscellaneous) business.industry Inorganic chemistry Oxide Bragg's law Chemical vapor deposition Epitaxy Amorphous solid chemistry.chemical_compound Semiconductor chemistry Optoelectronics Metalorganic vapour phase epitaxy business
Zdroj:	Applied Physics Letters. 66:2831-2833
ISSN:	1077-3118 0003-6951
Popis:	The growth and fabrication of high‐quality vertical distributed Bragg reflectors (DBRs) utilizing layers of InAlP and the AlAs native oxide are reported. The III–V epitaxial structures employed in this work consist of alternating layers of InAlP and AlAs grown on GaAs substrates by low‐pressure metalorganic chemical vapor deposition (MOCVD). The DBR mirrors are formed by selective lateral oxidation of the AlAs layers (H2O vapor + N2, 450 °C) resulting in a layered structure of single‐crystal InAlP and amorphous AlxOy. The oxidized vertical DBR mirrors having only 4.5 pairs exhibit high reflectivity in the 96%–99% range over a wide spectral region (Δλ∼200 nm). The structural and optical properties of these DBR mirrors have been measured and show that the reflectors are of high quality.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::23201940317ab2c713b113571bb0e749 https://doi.org/10.1063/1.113444 Zobrazit plný text záznamu