Thermal Behavior of Electron Irradiation Defects in CZ-Si
| Autor: | Yang Xian Li, Gui Feng Chen, Ermin Zhao, Hui Ying Cui, Li Li Cai |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Materials science
Silicon Annealing (metallurgy) Mechanical Engineering Radiochemistry Analytical chemistry Infrared spectroscopy chemistry.chemical_element Condensed Matter Physics law.invention Optical microscope chemistry Mechanics of Materials Electrical resistivity and conductivity law Electron beam processing General Materials Science Irradiation Fourier transform infrared spectroscopy |
| Zdroj: | Materials Science Forum. :1113-1116 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.561-565.1113 |
| Popis: | Behavior of the irradiation defects after annealing in electron irradiation CZ-Si has been studied by Four-Point Probe Measurement, Fourier Transform Infrared Absorption Spectrometer (FTIR) and Optical Microscope. The resistivities of irradiated silicon would decline under annealed at 750°C, it is considered that the oxygen related defects which present donor state were produced after annealed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|