Insights into the yield enhancement and ion emission process in metal-assisted SIMS

Autor: H.-N. Migeon, Patrick Bertrand, Arnaud Delcorte, Laurent Nittler
Rok vydání: 2012
Předmět:
Zdroj: Surface and Interface Analysis. 45:18-21
ISSN: 0142-2421
DOI: 10.1002/sia.5045
Popis: Although nowadays the use of cluster ion sources seems to enhance the secondary ion emission for nearly all materials, the technique of metal-assisted SIMS can still give further insights in the secondary ion emission process. In this study, the metallization for static SIMS analysis was performed in situ. The combination of a detailed morphology study by SEM, TEM and the secondary yield enhancements in time-of-flight SIMS allows to develop a model explaining the secondary yield enhancement in metal-assisted SIMS. Copyright © 2012 John Wiley & Sons, Ltd. Copyright © 2012 John Wiley & Sons, Ltd.
Databáze: OpenAIRE