Wet thermal annealing effect on TaN/HfO 2 /Ge metal—oxide—semiconductor capacitors with and without a GeO 2 passivation layer

Autor:	Mengrao Tang, Wei Huang, Chang-Bao Lu, Songyan Chen, Zheng Wu, Cheng Li, Rui-Fan Tang, Hongkai Lai, Xu Yang, Guanzhou Liu
Rok vydání:	2012
Předmět:	Metal Capacitor Oxide semiconductor Materials science Passivation law Basic research visual_art visual_art.visual_art_medium General Physics and Astronomy Christian ministry Engineering physics law.invention
Zdroj:	Chinese Physics B. 21:117701
ISSN:	1674-1056
DOI:	10.1088/1674-1056/21/11/117701
Popis:	National Natural Science Foundation of China [61176092, 61036003, 60837001]; National Basic Research Program of China [2012CB933503]; Ph.D. Program Foundation of Ministry of Education of China [20110121110025]; Fundamental Research Funds for the Central Universities, China [2010121056]
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::231a00f65d263ddfa3c8230231de0da3 https://doi.org/10.1088/1674-1056/21/11/117701 Zobrazit plný text záznamu