Mg doping studies of electron cyclotron resonance molecular beam epitaxy of GaN thin films

Autor:	Abdelhak Bensaoula, A. Fartassi, I. Berishev, Esther Kim, M. Sayhi
Rok vydání:	1999
Předmět:	Materials science Hall effect Doping Wide-bandgap semiconductor Analytical chemistry Surfaces and Interfaces Substrate (electronics) Thin film Atmospheric temperature range Condensed Matter Physics Electron cyclotron resonance Surfaces Coatings and Films Molecular beam epitaxy
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:2166-2169
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.581744
Popis:	A modified electron cyclotron resonance plasma source, allowing optically active GaN thin films at growth rates up to 1 μm per h, was utilized in a molecular beam epitaxy environment for Mg doping studies of GaN. The effect of the growth parameters on the Mg incorporation was studied using secondary ion mass spectroscopy and Hall measurements. We found that Mg does not incorporate when GaN is grown under Ga-rich conditions, independently of the Mg flux, in the temperature range of 700–800 °C. Only N-rich growth conditions allow measurable Mg incorporation. This incorporation increases with decreasing Ga cell temperature. Furthermore, under N-rich growth conditions, the Mg content is more sensitive to the lowering of the substrate temperature than to the increase of the Mg cell temperature.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2319ac3a43efd2e6f4118f94cb9b38cc https://doi.org/10.1116/1.581744 Zobrazit plný text záznamu