Device Characteristics of Nano Scale Junctionless Accumulation Mode FET (JAM-FET) with Localized Anti-channel Doping

Autor:	C.L. Lin, J.D. Lee, Y.J. Lee, Y.J. Lu, W.K. Yeh, T.K. Kang, P.C. Juan, Y.Z. Zhu, T.Y. Lin
Rok vydání:	2018
Předmět:	Materials science business.industry Doping Mode (statistics) Optoelectronics business Nanoscopic scale Communication channel
Zdroj:	Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
DOI:	10.7567/ssdm.2018.ps-9-20
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::230f90e6c58ef4dd843d33e53b1ef353 https://doi.org/10.7567/ssdm.2018.ps-9-20 Zobrazit plný text záznamu