Plasma Implantation Technology for Upcoming Ultra Shallow and Highly Doped Fully Depleted Silicon On Insulator Transistors
| Autor: | Frederic Gonzatti, Frederic Milési, Vincent Delaye, Julian Duchaine, Frank Torregrosa, Hasnaa Etienne, Karim Yckache, Jiro Matsuo, Masataka Kase, Takaaki Aoki, Toshio Seki |
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| Rok vydání: | 2011 |
| Předmět: |
inorganic chemicals
Materials science Ion beam Silicon business.industry Doping technology industry and agriculture Nanocrystalline silicon Silicon on insulator chemistry.chemical_element Nanotechnology equipment and supplies Epitaxy Plasma-immersion ion implantation Ion implantation chemistry Optoelectronics business |
| Zdroj: | AIP Conference Proceedings. |
| ISSN: | 0094-243X |
| DOI: | 10.1063/1.3548380 |
| Popis: | To face the continuous dimensions downscaling for upcoming semiconductor devices, we have investigated a plasma immersion ion implantation way and have compared the results to a conventional one. This new implantation method allows, in particular, high and thin doping concentration to field source and drain requirements for 32 nm node and below. In addition to this key step, a silicon selective epitaxy growth has been performed.Thus, n‐type and p‐type ion implantations have been carried out on thin blanket SOI substrates in Pulsion® plasma ion implantation tool manufactured by Ion Beam Services, with AsH3, BF3 or B2H6 precursors. Then a recrystallization annealing followed by silicon selective epitaxial growth has been performed in a reduced pressure chemical vapor deposition tool.Regarding n‐type implantation we observed a poly‐silicon growth in areas where the top silicon has been amorphous down to the buried oxide and a mono‐silicon growth for areas where the top silicon has not been completely amorpho... |
| Databáze: | OpenAIRE |
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