Simulation Study of Single-Event Burnout Reliability for 1.7-kV 4H-SiC VDMOSFET

Autor:	Jia-Hao Luo, Ying Wang, Meng-Tian Bao, Xing-Ji Li, Jian-Qun Yang, Fei Cao
Rok vydání:	2022
Předmět:	Electrical and Electronic Engineering Safety Risk Reliability and Quality Electronic Optical and Magnetic Materials
Zdroj:	IEEE Transactions on Device and Materials Reliability. 22:431-437
ISSN:	1558-2574 1530-4388
DOI:	10.1109/tdmr.2022.3188235
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::230e8a89f8342b9a6022b19895e91f58 https://doi.org/10.1109/tdmr.2022.3188235 Zobrazit plný text záznamu