Bipolar Resistive Switching in Epitaxial Mn 3 O 4 Thin Films on Nb-Doped SrTiO 3 Substrates
| Autor: | Xiaolan Shi, Dong-Yong Li, Rong-Ming Wang, Liuwan Zhang, Yu-Hang Wang, Boyang Liu, Xubo Lai |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
business.industry Film plane General Physics and Astronomy 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Resistive random-access memory Pulsed laser deposition Transmission electron microscopy 0103 physical sciences Electroforming Optoelectronics Thin film 010306 general physics 0210 nano-technology business |
| Zdroj: | Chinese Physics Letters. 33:067202 |
| ISSN: | 1741-3540 0256-307X |
| DOI: | 10.1088/0256-307x/33/6/067202 |
| Popis: | Spinel (001)-orientated Mn3O4 thin films on Nb-doped SrTiO3 (001) substrates are fabricated via the pulsed laser deposition method. X-ray diffraction and high-resolution transmission electron microscopy indicate that the as-prepared epitaxial film is well crystallized. In the film plane the orientation relationship between the film and the substrate is [100]Mn3O4||[110] Nb-doped SrTiO3. After an electroforming process, the film shows bipolar nonvolatile resistance switching behavior. The positive voltage bias drives the sample into a low resistance state, while the negative voltage switches it back to a high resistance state. The switching polarity is different from the previous studies. The complex impedance measurement suggests that the resistance switching behavior is of filament type. Due to the performance reproducibility and state stability, Mn3O4 might be a promising candidate for the resistive random access memory devices. |
| Databáze: | OpenAIRE |
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