Correlation of thermal annealing effect, crystallinity and electrical characteristics in c-axis crystallized InGaZnO thin-film transistors
| Autor: | Chun-Yen Chang, Ching Sang Chuang, Yu Chien Lai, Chun-Hu Cheng, Ping Chiou, Hsueh Hsing Lu, Shiang-Shiou Yen, Hsiao-Hsuan Hsu, Yu-Hsin Lin, Yu-Chien Chiu, Chih Pang Chang |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
business.industry Mechanical Engineering Metals and Alloys Substrate (electronics) Atmospheric temperature range Crystal Crystallinity Semiconductor Mechanics of Materials Thin-film transistor Materials Chemistry Optoelectronics Rectangular potential barrier Grain boundary business |
| Zdroj: | Journal of Alloys and Compounds. 643:S187-S192 |
| ISSN: | 0925-8388 |
| DOI: | 10.1016/j.jallcom.2014.12.207 |
| Popis: | A low off-state current of 1.6 × 10 −14 A/μm and a small subthreshold gate swing of 152 mV/decade were achieved in a novel thin film transistor using a c -axis crystallized InGaZnO semiconductor that could be obtained at a low substrate temperature range of 150 °C. From experimental results, we found that the lowered off-state current is mainly attributed to the formation of rich Ga–O bonds to reduce oxygen vacancies, and the c -axis crystallized structure of IGZO to increase the potential barrier on the source side due to the increase of local trap states at the grain boundary. |
| Databáze: | OpenAIRE |
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