The Influence of Predeposition of Nonolayer Thin Titanium Filns Upon the Crystallography of Subsequently Formed Pd2Si Layers on (100) Silicon

Autor:	F. J. Tams, J. H. Thomas, J. T. McGinn, D. M. Hoffman
Rok vydání:	1986
Předmět:	Crystallography Materials science chemistry Silicon chemistry.chemical_element Epitaxy Titanium
Zdroj:	MRS Proceedings. 83
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-83-231
Popis:	This paper reports upon a new technique for the formation of epitaxial Pd2Si on (100) silicon using thin predeposited titanium layers. Improvements in the quality of epitaxy in Pd2Si on {111} silicon by this technique will also be shown. A preliminary model for the formation of epitaxy will be given. Discrepancies between this model and results in the literature will be discussed and experiments suggested to resolve the uncertainties.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::22ed42f1cf27778791617b1534b2dab6 https://doi.org/10.1557/proc-83-231 Zobrazit plný text záznamu Full text from SpringerLink