Laser Induced Single Event Upset (SEU) Testing of Commercial Memory Devices with Embedded Error Correction Codes (ECC)

Autor:	Yang Han, Yurong Liu, Zhifeng Lei, Zhangang Zhang, Yujuan He
Rok vydání:	2022
Předmět:	History Computer Science Applications Education
Zdroj:	Journal of Physics: Conference Series. 2395:012015
ISSN:	1742-6596 1742-6588
DOI:	10.1088/1742-6596/2395/1/012015
Popis:	Results of laser-induced single event upset testing of devices with embedded error correction codes are described. Specifically, the memory system, consisting of a Micron MT41K256M16TW-107 IT: P 32 Meg×16×8 banks Dual Dynamic Random Access Memories (DDRs) was tested on a self-made test board. Two samples of each memory system or device type were irradiated with a pulsed laser. The units were irradiated by using a continual read/write correct loop in several bit patterns. Results for both correctable and uncorrectable errors are presented along with soft error data records.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::22e8922533541ba52893aa9d93a17873 https://doi.org/10.1088/1742-6596/2395/1/012015 Zobrazit plný text záznamu