Peculiarities of the initial stage of growth of niobium-based nanostructures on a Si(111)-7 × 7 surface
| Autor: | A. V. Putilov, A. Yu. Aladyshkin, D. A. Muzychenko |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Nanostructure Silicon Analytical chemistry Niobium chemistry.chemical_element Nanotechnology 02 engineering and technology Substrate (electronics) Conductivity 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films law.invention chemistry law 0103 physical sciences Thin film Scanning tunneling microscope 010306 general physics 0210 nano-technology Deposition (law) |
| Zdroj: | Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 10:273-281 |
| ISSN: | 1819-7094 1027-4510 |
| DOI: | 10.1134/s1027451016020178 |
| Popis: | The initial stage of growth of nanoislands prepared by thermal deposition of niobium on the reconstructed surface of Si(111)-7 × 7 in ultrahigh vacuum is experimentally investigated. The morphological and electrophysical properties of niobium-based nanostructures are studied by means of low-temperature scanning tunneling microscopy and spectroscopy. It is found that upon the deposition of niobium on a substrate at room temperature, clusters and nanoislands are formed on the silicon surface, having a characteristic lateral size of 10 nm with the metallic type of tunneling conductivity at low temperatures. Upon the deposition of niobium on a heated substrate, quasi-one-dimensional (1D) and quasi-two-dimensional (2D) structures with typical lateral dimensions of up to 200 nm and three-dimensional pyramidal islands with semiconducting type of tunneling conductivity at low temperatures are formed. |
| Databáze: | OpenAIRE |
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