Effect of Auger recombination on the thermal stability of high-voltage high-power semiconductor diodes
| Autor: | T. T. Mnatsakanov, M. E. Levinshteĭn, A. S. Freĭdlin |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Physics
Auger effect Computer simulation business.industry Inversion (meteorology) High voltage Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Computational physics symbols.namesake Semiconductor Computational chemistry symbols Thermal stability business Diode |
| Zdroj: | Semiconductors. 42:220-227 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s106378260802019x |
| Popis: | An analytical model that accounts for the effect of Auger recombination on the position of inversion points in the current-voltage characteristics of high-voltage semiconductor diodes is suggested. It is shown that Auger recombination not only shifts the position of the inversion points in the current-voltage characteristics of the diodes, but also changes the number of possible inversion points in the structures. Because the existence and position of the inversion points largely determine the thermal stability of the diodes, especially in the current-surge mode, the predictions of the model appear to be practically important. To verify the conclusions from the analytical model, a numerical simulation was performed using the ISSLEDOVANIE software. The results of the numerical calculations are in full agreement with the conclusions made based on the model. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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