| Autor: |
Susumu Onizawa, Masataka Sasaki, Tetsuo Muranoi |
| Rok vydání: |
1994 |
| Předmět: |
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| Zdroj: |
Journal of Crystal Growth. 138:255-259 |
| ISSN: |
0022-0248 |
| DOI: |
10.1016/0022-0248(94)90817-6 |
| Popis: |
Properties of ZnSe films doped with iodine impurities were investigated. The ZnSe films in most cases were grown at 350°C by using metallic zinc and selenium as the source materials; their vapors were transported separately by H2 gas under atmospheric pressure. CH3I (9.4 ppm, diluted in helium) was used as a dopant source. Epitaxial growth occurred when the flow rate of CH3I was below 0.025 μmol/min. The electron concentration could be controlled in the range 5 × 1016 − 7 × 1017 cm-3, which was proportional to the dopant flow rate between 0.0021 and 0.016 μmol/min. In a film grown at 300°C, the electron concentration reached 4.4 × 1018 cm-3. A high quality PL property was observed for the film grown with the minimum flow rate of CH3I. When the [Se] to [Zn] flow rate ratio was varied from 0.69 to 3.53 at a constant CH3I flow rate of 0.0042 μmol/min, the deep-level emission almost disappeared above [Se] [Zn] = 2.2 . The value of full width at half maximum of the (600) Cu Kα X-ray diffraction peaks showed its minimum at the same flow rate ratio. Two-step doping of iodine was also attempted to obtain the optically and electrically desirable ZnSe film as a blue-emission layer. SIMS analysis confirmed that the ZnSe film with a two-step iodine concentration was indeed grown. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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