Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity
Autor: | Kaizhen Han, Hasita Velluri, Annie Kumar, Aaron Thean, Yida Li, Xuanyao Fong, Shengqiang Xu, Umesh Chand, Chengkuan Wang, Ying Wu, Xiao Gong, Subhranu Samanta |
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Rok vydání: | 2020 |
Předmět: |
010302 applied physics
Materials science Condensed matter physics Amorphous indium gallium zinc oxide Transconductance Gate dielectric Dielectric 01 natural sciences Electronic Optical and Magnetic Materials Amorphous solid Thin-film transistor Logic gate Subthreshold swing 0103 physical sciences Electrical and Electronic Engineering |
Zdroj: | IEEE Electron Device Letters. 41:856-859 |
ISSN: | 1558-0563 0741-3106 |
DOI: | 10.1109/led.2020.2985787 |
Popis: | We report high performance amorphous Indium-Gallium-Zinc-Oxide ( ${a}$ -IGZO) thin-film transis- tors (TFTs) with 10 nm atomic-layer-deposited HfO2 as the gate dielectric, achieving subthreshold swing ( SS ) of 70.2 mV/decade, high effective mobility ( $\mu _{\textit {eff}}$ ) of 55.3cm2/ $\text{V}\cdot \text{s}$ at an inversion carrier density ( $N_{\textit {inv}}$ ) of $5\times 10^{{12}}$ cm-2, and large $I_{ON}/\text{I}_{OFF}$ of >109. Furthermore, very good device-to-device uniformity has been confirmed by the statistical distribution of SS and maximum transconductance (Gm, max) measured from 20 pristine TFT devices. This ${a}$ -IGZO TFT has immense potential for the ultrafast and low power electronic devices for next-generation cost-effective emissive display, image sensing, and hardware for artificial intelligence (AI). |
Databáze: | OpenAIRE |
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