| Autor: |
Chen Cheng Liao, Yung-Fu Chen, Yu-Pin Lan, S. C. Wang |
| Rok vydání: |
2000 |
| Předmět: |
|
| Zdroj: |
Solid State Lasers IX. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.382755 |
| Popis: |
A systematic investigation on a series of Nd:YVO 4 crystals with different dopant concentration is conducted to scale the diode-end-pumped laser performance to higher powers. The analysis reveals that lowering the dopant concentration linearly extends the fracture-limited pump power and the thermal shock parameter plays an important role in the estimation of the fracture-limited pump power. The thermal shock parameter in Nd:YVO 4 crystals has been determined from the laser experiments. Based on the analysis, we demonstrate a compact and efficient diode-end- pumped TEM oo laser with output power of 25.2-W for 52-W of incident pump power by use of a single YVO4 crystal with a Nd concentration of 0.3 at.%. In Q-switched operation 21-W of average power at a pulse repetition rate of 100 kHz and approximately 1.1-m pulse energy at a pulse repetition rate of 10 Hz were produced. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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