Effects of alloy ambient on PdGe contacts on n-type GaAs

Autor:	Q.J. Hartmann, G. E. Stillman, Judith E. Baker, M. Hattendorf, D. F. Lemmerhirt, D.A. Ahmari, Qing-Zheng Yang
Rok vydání:	1998
Předmět:	Materials science Physics and Astronomy (miscellaneous) Hydrogen Contact resistance Transistor Alloy Metallurgy chemistry.chemical_element engineering.material law.invention Gallium arsenide chemistry.chemical_compound chemistry law engineering
Zdroj:	Applied Physics Letters. 72:3479-3481
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.121672
Popis:	A high concentration of hydrogen in the alloy ambient slows the formation of PdGe contacts and increases the resistance of the PdGe to GaAs etchants. The effects of alloy ambient on alloy formation, specific contact resistance, and chemical reactivity of PdGe contacts on n-type GaAs have been studied. A very low specific contact resistance of
Databáze:	OpenAIRE
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