Evaluation of Long-Term Reliability and Overcurrent Capabilities of 15-kV SiC MOSFETs and 20-kV SiC IGBTs During Narrow Current Pulsed Conditions
| Autor: | James A. Schrock, Aderinto Ogunniyi, Stephen B. Bayne, Emily A. Hirsch, Shelby Lacouture, Heather O'Brien, Matthew Kim, J. Forbes, Argenis Bilbao |
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| Rok vydání: | 2020 |
| Předmět: |
Nuclear and High Energy Physics
Materials science business.industry Power factor Pulsed power Condensed Matter Physics 01 natural sciences 010305 fluids & plasmas Overcurrent chemistry.chemical_compound chemistry Logic gate 0103 physical sciences MOSFET Silicon carbide Device under test Optoelectronics Waveform business |
| Zdroj: | IEEE Transactions on Plasma Science. 48:3962-3967 |
| ISSN: | 1939-9375 0093-3813 |
| Popis: | Silicon carbide (SiC) is becoming a preferred technology of choice for power dense application compared with silicon (Si). A more comprehensive analysis of the long-term pulsed power reliability of SiC is necessary so that the technology can make the transition commercially. In this article, a testbed is utilized to evaluate research grade 15-kV SiC MOSFETs and 20-kV SiC IGBTs manufactured by Wolfspeed, a Cree Company. A testbed was developed here at Texas Tech University (TTU), Lubbock, TX, USA, to test these two devices. The narrow pulse testbed’s capacitor bank can be charged up to 10 kV and output square waveform pulse up to $2.0~\mu \text{s}$ . The waveform has a full-width at half-maximum pulse and is tested at a repetition pulse rate of three seconds. The electrical characteristics of the forward conduction and reverse breakdown of the device under test (DUT) are measured periodically during the experiment. The DUTs were pulsed at different current levels, up to 340 A (1.06 kA/cm2) for the IGBTs and 74 A (296 A/cm2) for MOSFETs, while the electrical device degradation was monitored. This work discusses the results of the long-term pulsed power reliability, failure modes, and their robustness in overcurrent operations of high-power SiC MOSFETs and IGBTs. |
| Databáze: | OpenAIRE |
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