Temperature effects in a RIPE reactor
| Autor: | Alain Inard, Jean-Marc Francou, Richard Petri, Daniel Henry |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
Silicon
Plasma etcher Analytical chemistry Gas chemistry chemistry.chemical_element Substrate (electronics) Liquid nitrogen Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Resist Nitrogen gas Dry etching Electrical and Electronic Engineering |
| Zdroj: | Microelectronic Engineering. 13:459-462 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(91)90133-x |
| Popis: | The capabilities of a new prototype etcher, the RIPE (Resonant Inductive Plasma Etcher) have been investigated with a modified substrate holder cooled by a flow of liquid nitrogen/nitrogen gas. Results concerning dry etching of silicon and resist material with, respectivelySF 6 and O 2 gas chemistry are presented. Experiments concentrate on the dependence of the profile on the temperature of the substrate (T) at low pressure ( |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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