Comparative study of ZnO thin film prepared by pulsed laser deposition – Comparison of influence of different ablative lasers
| Autor: | Andrej Vincze, Jaroslav Kováč, Marie Netrvalová, Miroslav Michalka, Jaroslav Bruncko, Pavol Šutta |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
medicine.medical_treatment chemistry.chemical_element Nanotechnology 02 engineering and technology 01 natural sciences Pulsed laser deposition law.invention Electrical resistivity and conductivity law 0103 physical sciences medicine Thin film Gallium Instrumentation 010302 applied physics Excimer laser business.industry Doping 021001 nanoscience & nanotechnology Condensed Matter Physics Laser Surfaces Coatings and Films chemistry Nd:YAG laser Optoelectronics 0210 nano-technology business |
| Zdroj: | Vacuum. 138:184-190 |
| ISSN: | 0042-207X |
| DOI: | 10.1016/j.vacuum.2016.09.013 |
| Popis: | The contribution deals with transparent conductive oxides based on ZnO, which were prepared by Pulsed Laser Deposition (PLD) and their different properties are compared in the scope of the applied ablating lasers: (1) a solid state Nd:YAG laser working at third harmonic generation (wavelength 355 nm, 15 ns pulse length and 10 Hz pulsing frequency) and (2) an excimer laser working with KrF gas composition (248 nm, 20 ns and 10 Hz). The first part of the study deals with the influence of the oxygen pressure on crystallographic parameters of undoped ZnO films and the pressure interval between 2 and 5 Pa was assessed as an optimum. Moreover, the influence of different doping elements, aluminum and gallium, respectively, were analyzed. The results showed that a small amount (∼0.15% wt. content) of Al (or Ga, respectively) substantially improved carrier concentration with adequate resistivity decrease. Furthermore, optical properties: – transmittances and energy band-gap shift were investigated. Comparison between applied lasers revealed a substantially positive effect on electrical properties for the excimer laser. Moreover, acquired results showed that there is a complex dependence among chemical composition, growth conditions and final properties of the ZnO doped films which can be effectively controlled by using PLD. |
| Databáze: | OpenAIRE |
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