CMOS Inverter Based on Gate-All-Around Silicon-Nanowire MOSFETs Fabricated Using Top-Down Approach

Autor:	N. Balasubramanian, K.D. Buddharaju, Dim-Lee Kwong, S. R. Omampuliyur, C.H. Tung, Selin H. G. Teo, Navab Singh, Guo-Qiang Lo, Wei-Wei Fang, S.C. Rustagi
Rok vydání:	2007
Předmět:	Materials science business.industry Subthreshold conduction Transistor Electrical engineering High voltage Electronic Optical and Magnetic Materials law.invention CMOS law Logic gate MOSFET Miniaturization Inverter Electrical and Electronic Engineering business
Zdroj:	IEEE Electron Device Letters. 28:1021-1024
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2007.906622
Popis:	This letter demonstrates, for the first time, the integration of gate-all-around (GAA) Si-nanowire transistors into CMOS inverters using top-down approach. With matching of the drive currents of n- and p-MOSFETs using different gate lengths to achieve symmetric pull-up and pull-down, sharp ON- OFF transitions with high voltage gains (e.g., DeltaV OUT/DeltaV IN up to ~ 40 for V DD = 1.2 V) are obtained. The inverter maintains its good transfer characteristics and noise margins for wide range of V DD tested down to 0.4 V. Individual transistors show excellent subthreshold characteristics and drive currents. The results are discussed in light of the circuit performances reported for other advanced nonclassical device architectures such as FinFETs. The integration potential of GAA Si-nanowire transistors to realize CMOS-circuit functionality is thus demonstrated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::22bacd250e997856af6aeca69b4e33b6 https://doi.org/10.1109/led.2007.906622 Zobrazit plný text záznamu