Magnetoresistance Switch Effect of a Sn-Doped Bi2Te3 Topological Insulator

Autor:	Hai Lin Yu, Ding Hua Bao, Guo Wei Yang, Cheng Xin Wang, Shu Wei Li, Hong Bin Zhang
Rok vydání:	2011
Předmět:	Semiconductor Materials science Condensed matter physics Magnetoresistance Mechanics of Materials business.industry Mechanical Engineering Topological insulator Doping Electrode General Materials Science business Magnetic field
Zdroj:	Advanced Materials. 24:132-136
ISSN:	0935-9648
DOI:	10.1002/adma.201103530
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::22b6b30ec571aea3adb780fa00d0572b https://doi.org/10.1002/adma.201103530 Zobrazit plný text záznamu Plný text