Trap related dielectric absorption of HfSiO films in metal-insulator-semiconductor structures

Autor:	M. Kerber, Christian Fachmann, H. Reisinger, Stephan Kudelka, Uwe Schröder, Johannes Heitmann
Rok vydání:	2009
Předmět:	Dielectric absorption Materials science Silicon Annealing (metallurgy) business.industry chemistry.chemical_element Condensed Matter Physics law.invention Capacitor Semiconductor chemistry law Optoelectronics Electrical and Electronic Engineering Metal insulator Tin business Titanium
Zdroj:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27:321
ISSN:	1071-1023
DOI:	10.1116/1.3043532
Popis:	Dielectric absorption in HfSiO has been investigated with transient floating potential measurements. This has been achieved by peripheral component interconnect-based recording after the application of conditioning pulses. Metal-insulator-semiconductor (TiN∕HfSiO∕n+Si) capacitors show an increase in dielectric absorption with increasing annealing temperature when the film is covered with TiN. This effect is attributed to electrically active defects introduced by the presence of titanium during annealing.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::22af094976c092c6ebbccd586fdf592c https://doi.org/10.1116/1.3043532 Zobrazit plný text záznamu