Influence of tungsten doping on dielectric, electrical and ferroelectric behavior of BaBi4Ti4O15 ceramics
| Autor: | J.D. Bobić, Juras Banys, A.S. Dzunuzovic, Biljana Stojanović, M.M. Vijatović Petrović, R. M. Katiliute, Nikola Ilic, Maksim Ivanov |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Analytical chemistry chemistry.chemical_element Nanotechnology 02 engineering and technology Dielectric Crystal structure Tungsten 01 natural sciences Condensed Matter::Materials Science Condensed Matter::Superconductivity 0103 physical sciences Materials Chemistry Ceramic 010302 applied physics Mechanical Engineering Transition temperature Doping Metals and Alloys 021001 nanoscience & nanotechnology Ferroelectricity chemistry Mechanics of Materials visual_art visual_art.visual_art_medium Orthorhombic crystal system 0210 nano-technology |
| Zdroj: | Journal of Alloys and Compounds. 702:619-625 |
| ISSN: | 0925-8388 |
| DOI: | 10.1016/j.jallcom.2017.01.280 |
| Popis: | The effect of tungsten (W 6+ ) doping on modification of the structure, dielectric, ferroelectric and electrical properties of BaBi 4 Ti 4-x W x O 15 (BBTWx, x = 0, 0.03, 0.05 and 0.07) was investigated. The ceramic samples were synthesized by the conventional solid state reaction method. XRD data indicated the formation of single-phase layered crystalline structure that confirmed orthorhombic structure type of all compositions with space group A2 1 am . SEM micrographs suggest that the grain size slightly decreases with W doping. The temperature dependent dielectric study revealed that the dielectric constant decreases with W doping while transition temperature slightly increases. Influence of tungsten on relaxor behavior and diffuseness of phase transition is also discussed. Effect of W doping on the dielectric and electrical properties were investigated in terms of ion doping and defect mechanism. The ferroelectric properties were studied by P-E hysteresis loop and it was observed that the remanent polarization increases with a small level of W doping. |
| Databáze: | OpenAIRE |
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