A 2-D Double Gate Heterojunction Tunnel-FET Based on AlGaSb/InAs: Analytical Analysis on Electric Field and Capacitance
| Autor: | Sunjida Sultana, Md. Tawfiq Amin, Twisha Titirsha |
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| Rok vydání: | 2021 |
| Zdroj: | 2021 International Conference on Science & Contemporary Technologies (ICSCT). |
| DOI: | 10.1109/icsct53883.2021.9642561 |
| Databáze: | OpenAIRE |
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