In situ measurement of Bi4Ge3O12 interface supercooling during melt crystal growth

Autor:	V. B. Tsvetovsky, Vladimir D. Golyshev, M. A. Gonik
Rok vydání:	2002
Předmět:	In situ Chemistry Crystal orientation Analytical chemistry Crystal growth Condensed Matter Physics law.invention Inorganic Chemistry Crystallography law Materials Chemistry Growth rate Facet Supercooling Pyrometer
Zdroj:	Journal of Crystal Growth. :735-739
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(01)01990-x
Popis:	The determination of the dependence for supercooling of Bi 4 Ge 3 O 12 facet on growth rate V is discussed. The method of measurement of the interface temperature by an optical pyrometer in the presence of several facets with different crystallographic orientation at the measuring spot is examined.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2293e7681491f35b6ff49c8cbecd7cdf https://doi.org/10.1016/s0022-0248(01)01990-x Zobrazit plný text záznamu Full Text from ScienceDirect