Negative magnetoresistance in iron doped TiN thin films prepared by reactive magnetron sputtering
| Autor: | Muhammad B. Haider, Javed Y. Khan, Mohammed Fayyad Al-Kuhaili, Monzer Maarouf, Abdullah Aljaafari |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Magnetoresistance Band gap technology industry and agriculture Analytical chemistry chemistry.chemical_element 02 engineering and technology Sputter deposition equipment and supplies 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Titanium nitride Electronic Optical and Magnetic Materials chemistry.chemical_compound X-ray photoelectron spectroscopy chemistry Sputtering 0103 physical sciences Thin film 0210 nano-technology Titanium |
| Zdroj: | Journal of Magnetism and Magnetic Materials. 514:167235 |
| ISSN: | 0304-8853 |
| DOI: | 10.1016/j.jmmm.2020.167235 |
| Popis: | Iron doped titanium nitride thin films were prepared by RF/DC magnetron sputtering of titanium and iron targets in the presence of argon and nitrogen gasses. Iron concentration in the films was controlled by adjusting the DC power of the sputtering gun whereas the RF power for the titanium target was kept constant for all the films. Spectrophotometry of the grown films revealed a reduction in the bandgap with the increase in the iron concentration in the films. X-ray photoelectron spectroscopy of the films confirmed the presence of iron and the increase in its concentration with the increase in the DC sputtering power. The surface roughness of the films slightly increased with the increase in the iron concentration. All the grown films were n-type semiconductors and the carrier concentration increased with the increase in iron concentration. Positive magnetoresistance was observed in undoped or low-doped titanium nitride films, whereas negative magnetoresistance was observed in the films with high iron concentration, which was due to the formation of ferromagnetically aligned magnetic polarons. |
| Databáze: | OpenAIRE |
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