Extreme Short-Channel Effect on RTS and Inverse Scaling Behavior: Source–Drain Implantation Effect in 25-nm nand Flash Memory

Autor:	Charan Srinivasan, Pranav Kalavade, Taehoon Kim, Akira Goda, Nathan R. Franklin
Rok vydání:	2011
Předmět:	Materials science Dopant business.industry Doping Short-channel effect Noise (electronics) Signal Flash memory Electronic Optical and Magnetic Materials Logic gate Electronic engineering Optoelectronics Electrical and Electronic Engineering business Scaling
Zdroj:	IEEE Electron Device Letters. 32:1185-1187
ISSN:	1558-0563 0741-3106
Popis:	In 25-nm NAND Flash memory, source-drain implantation conditions significantly affect random telegraph signal (RTS). In this extremely short gate length regime, RTS is proportional to the effective gate length (Leff) which exhibits an “inverse scaling effect.” Process simulation reveals that the laterally straggled and diffused As atoms from source/drain are sufficient to change the effective boron concentration even in the center of the channel which changes macroscale potential profile for the short-channel effect but also changes RTS by modulating random discrete dopant (RDD) effect. This result continues up to 10 000 program/erase cycles which indicates that the defect generation rate for RTS is not changed under the relevant doping conditions. Modeling of the source-drain dopant distribution must include atomistic simulation for accurate prediction of the RDD effect in NAND Flash memory below 30 nm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::226d98be83671c296359aa479ad36e2a https://doi.org/10.1109/led.2011.2159573 Zobrazit plný text záznamu