Study of the Impact of Growth and Post-Growth Processes on the Surface Morphology of 4H Silicon Carbide Films
| Autor: | Giuseppe Abbondanza, A. Pecora, Corrado Bongiorno, Patrick Fiorenza, Francesco La Via, Andrea Severino, Vito Raineri, Danilo Crippa, Andrea Canino, Massimo Camarda, Marco Mauceri, Antonino La Magna |
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| Rok vydání: | 2012 |
| Předmět: |
Surface (mathematics)
Materials science Argon Morphology (linguistics) Silicon Mechanical Engineering Stacking chemistry.chemical_element Nanotechnology Condensed Matter Physics chemistry.chemical_compound chemistry Mechanics of Materials Surface roughness Silicon carbide General Materials Science Composite material |
| Zdroj: | Materials Science Forum. :149-152 |
| ISSN: | 1662-9752 |
| Popis: | In this paper we study the surface morphology of 4° degree off, silicon terminated, 4H Silicon Carbide (4H-SiC) in terms of growth parameters and post growth argon thermal annealing. We find that out-of-equilibrium conditions favor the reduction of the surface roughness. Furthermore, we find preliminary indications that the same growth parameters that lead to the reduction of the surface roughness promote also a reduction of (1,3) and (4,4) stacking faults density. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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