Calibration Method for Elemental Quantification

Autor:	R. B. Irwin, R. J. Wesson, J. M. McKinley, Fred A. Stevie, B. M. Purcell, Catherine Vartuli, Lucille A. Giannuzzi, T. L. Shofner
Rok vydání:	2000
Předmět:	Detection limit Secondary ion mass spectrometry Materials science Ion implantation Silicon chemistry Analytical chemistry Calibration chemistry.chemical_element Rutherford backscattering spectrometry Instrumentation Borophosphosilicate glass Ion
Zdroj:	Microscopy and Microanalysis. 6:536-537
ISSN:	1435-8115 1431-9276
DOI:	10.1017/s1431927600035170
Popis:	Energy Dispersive Spectrometry (EDS) is generally calibrated for quantification using elemental standards. This can introduce errors when quantifying non-elemental samples and does not provide an accurate detection limit. In addition, variations between analysis tools can lead to values that differ considerably, especially for trace elements. By creating a standard with an exact trace composition, many of the errors inherent in EDS quantification measurements can be eliminated.The standards are created by high dose ion implantation. For ions implanted into silicon, a dose of 1E16 cm-2 results in a peak concentration of approximately 1E21 cm-3 or 2% atomic. The exact concentration can be determined using other methods, such as Rutherford Backscattering Spectrometry (RBS) or Secondary Ion Mass Spectrometry (SIMS). For this study, SIMS analyses were made using a CAMECA IMS-6f magnetic sector. Measurement protocols were used that were developed for high concentration measurements, such as B and P in borophosphosilicate glass (BPSG).
Databáze:	OpenAIRE
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