Physical and Electrical Characteristics of F- and C-Doped Low Dielectric Constant Chemical Vapor Deposited Oxides
| Autor: | Zhen-Cheng Wu, Shwang-Ming Jeng, Chen-Hua Yu, Mao-Chieh Chen, Weng Chang, Syun-Ming Jang, Pei-Fen Chou, Chiu-Chih Chiang, Wei-Hao Wu, Zhi-Wen Shiung, Mong-Song Liang |
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| Rok vydání: | 2001 |
| Předmět: |
Permittivity
Renewable Energy Sustainability and the Environment Chemistry Thermal decomposition Doping Analytical chemistry Dielectric Nitride Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Gate oxide Materials Chemistry Electrochemistry Thermal stability Thin film |
| Zdroj: | Journal of The Electrochemical Society. 148:F115 |
| ISSN: | 0013-4651 |
| DOI: | 10.1149/1.1368108 |
| Popis: | This work compares the physical and electrical properties of two species of inorganie low dielectric constant (low-k) chemical vapor deposited (CVD) oxides, F-doped fluorinated silicate glass (FSG, k = 3.5) and C-doped organosilicate glass (OSG, k - 2.9), Experimental results indicate that FSG has a higher thermal stability (>600°C) than OSG (500°C), based on the results of thermal annealing for 30 min in an N 2 ambient. The degradation of the low-k property in OSG is mainly due to the thermal decomposition of methyl (-CH 3 ) groups at temperatures above 500°C. For the Cu gated oxide-sandwiched low-k dielectric metal-insulator-semiconductor (MIS) capacitors. Cu penetration was observed in both FSG and OSG after the MIS capacitors were bias-lemperature stressed at 250 and 150°C, respectively, with an effective applied field of 0.8 MV/cm. Specifically, Cu appeared to drift more readily in OSG than in FSG, presumably because OSG has a more porous and less dense structure than FSG. The Cu permeation can he impeded by a thin nitride (SiN) harrier layer. |
| Databáze: | OpenAIRE |
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