Drain biased TDDB lifetime model for ultra thin gate oxide

Autor:	A. Oates, P.J. Liao, Kenneth Wu, J.J. Wang, Chin-Yuan Ko, Y.S. Tsai
Rok vydání:	2004
Předmět:	Thin gate oxide Materials science Electrostatic discharge business.industry Electrical engineering Oxide Time-dependent gate oxide breakdown Stress (mechanics) chemistry.chemical_compound chemistry Gate oxide MOSFET Optoelectronics business Voltage
Zdroj:	2004 IEEE International Reliability Physics Symposium. Proceedings.
Popis:	For drain biased TDDB, hole injection enhanced gate oxide degradation has been discussed and modeled, and the model is in excellent agreement with the experimental data. Although hole injection will degrade gate oxide, lifetime of drain biased TDDB is better than gate bias due to stress area difference and strong area dependence (/spl beta/ is small) for ultra thin gate oxide; however, it may become a concern for thick oxide for drain bias.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::224bb0c5a423d2a5db574eb8352b9beb https://doi.org/10.1109/relphy.2004.1315403 Zobrazit plný text záznamu