Atomic Layer Deposition of Iridium Thin Films Using Sequential Oxygen and Hydrogen Pulses
| Autor: | Jani Hämäläinen, Jyrki Räisänen, Markku Leskelä, Mikko Ritala, Mikko Heikkilä, Pasi Jalkanen, Miika Mattinen, Kenichiro Mizohata, Marko Vehkamäki |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Hydrogen Inorganic chemistry Nucleation chemistry.chemical_element 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Atomic layer deposition General Energy Iridium acetylacetonate chemistry Chemical engineering Iridium Texture (crystalline) Physical and Theoretical Chemistry Thin film 0210 nano-technology Deposition (chemistry) |
| Zdroj: | The Journal of Physical Chemistry C. 120:15235-15243 |
| ISSN: | 1932-7455 1932-7447 |
| DOI: | 10.1021/acs.jpcc.6b04461 |
| Popis: | Atomic layer deposition (ALD) is an advanced thin-film deposition method based on self-limiting surface reactions that allows for the controlled deposition of conformal, high-quality thin films of various materials. In this study, we aimed to explore how modifying the deposition chemistry affects the growth and properties of iridium films. We demonstrated a new ALD process using sequential pulses of iridium acetylacetonate [Ir(acac)3], oxygen (O2), and hydrogen (H2) and compared this to the established Ir(acac)3 + O2 process in the wide temperature range of 200–350 °C. A reaction scheme is proposed to explain how both oxygen and hydrogen affect the film growth. Comprehensive information on film properties was obtained for both processes. In particular, the strong (111) texture seen in this study has not been reported before for ALD iridium films. Changes in film properties, especially lowered resistivity, stronger (111) texture, and faster nucleation compared to the Ir(acac)3 + O2 process, should motivate... |
| Databáze: | OpenAIRE |
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