The correlation between the chemical compositions and optical properties of TiSixNy as an embedded layer for AttPSM in 193 nm
| Autor: | Wen-an Loong, Wen-long Yeh, Cheng-ming Lin, Show-ping Tseng |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
Analytical chemistry chemistry.chemical_element Condensed Matter Physics Nitrogen Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry Sputtering law Electrical and Electronic Engineering Thin film Photolithography Tin Chemical composition Layer (electronics) Saturation (magnetic) |
| Zdroj: | Microelectronic Engineering. :481-487 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(01)00540-8 |
| Popis: | We reported that the optical and physical properties of TiSi x N y thin films formed by sputtering are suitable to be used as an embedded layer in 193 nm. The TiSi x N y films were deposited under DC power of Ti target 170–220 W, RF power of Si target 50–110 W, Ar 50 sccm and N 2 3–7 sccm. The increasing of the atomic percentage of nitrogen in TiSi x N y has a good agreement with its n and k . With the formation of Si 3 N 4 and TiN structures, the TiSi x N y thin film’s n started to increase, k to decrease. After the saturation of formations of Si 3 N 4 and TiN structures, the Si and Ti states started to show up, resulted this thin film’s n to decrease, and k to increase. The n and k values were calculated by our modified R – T (reflectance–transmittance) method. Controlling a thin film’s compositions during sputtering could allow the manipulation of its n and k . |
| Databáze: | OpenAIRE |
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